November 2013
FCP13N60N / FCPF13N60NT
N-Channel SupreMOS ? MOSFET
600 V, 13 A, 258 m Ω
Features
? R DS(on) = 220 m Ω (Typ.) @ V GS = 10 V, I D = 6.5 A
? Ultra Low Gate Charge (Typ. Q g = 30.4 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 145 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
? LCD/LED/PDP TV
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
? Lighting
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C =
25 o C
unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCP13N60N
FCPF13N60NT
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
13
8.2
±30
13*
8.2*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
39
39
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
235
4.3
1.16
100
20
mJ
A
mJ
V/ns
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
116
0.93
33.8
0.27
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FCP13N60N
FCPF13N60NT
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case , Max.
Thermal Resistance, Junction to Ambient, Max.
1.07
62.5
3.7
62.5
o
C/W
?2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. C1
1
www.fairchildsemi.com
相关PDF资料
FCPF16N60NT MOSFET N-CH 600V TO-220-3
FCPF16N60 MOSFET N-CH 600V 16A TO-220F
FCPF190N60 MOSFET N-CH 600V TO-220-3
FCPF20N60T MOSFET N-CH 600V 20A TO-220F
FCPF22N60NT MOSFET N-CH 600V 22A TO-220F
FCPF380N60 MOSFET N-CH 600V TO-220-3
FCPF400N60 MOSFET N-CH 600V TO-220-3
FCPF7N60NT MOSFET N-CH 600V 6.8A TO-220F
相关代理商/技术参数
FCPF13N60T 制造商:Fairchild Semiconductor Corporation 功能描述:
FCPF16N60 功能描述:MOSFET 600V N-CH SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF16N60NT 功能描述:MOSFET SupreMOS 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF190N60 功能描述:MOSFET SuperFET2, 190mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF190N60_F152 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 20.2A TO-220F
FCPF190N60E 功能描述:MOSFET 600V N-CHAN MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF190N60E_F152 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V TO-220-3
FCPF20N60 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube